Pseudomorphic SiC alloys formed by Ge ion implantation

Autor:	M. W. Dashiell, J. R. Gigante, W. J. Malkowski, G. Xuan, Marek Skowronski, James Kolodzey, X. Zhang, Rowland C. Clarke, E. Ansorge, G. C. DeSalvo, J. Liu
Rok vydání:	2004
Předmět:	Materials science Physics and Astronomy (miscellaneous) Phonon Annealing (metallurgy) Alloy Wide-bandgap semiconductor chemistry.chemical_element Germanium Heterojunction engineering.material Crystallography Ion implantation chemistry X-ray crystallography engineering
Zdroj:	Applied Physics Letters. 85:2253-2255
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1791741
Popis:	Pseudomorphic-strained layers containing from 0.07–1.25atomic% Ge were formed by ion implantation at 1000°C into 4H-SiC substrates. X-ray diffraction revealed high crystalline quality and coherent interfaces for strains up to 1.4%. Infrared reflectivity indicated a phonon mode at 948cm−1, attributed to Ge implantation disorder. Annealing above 1250°C caused the disappearance of the 948cm−1 disorder mode, and the strengthening of the phonon mode at 848cm−1, associated with the 4H stacking sequence. Structural measurements of the annealed samples revealed thermally stable, coherently strained layers of the 4H polytype, without precipitation, suggesting an isoelectronic Ge alloy compatible with SiC for heterostructure strained layer engineering.
Databáze:	OpenAIRE
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