Modulation of vertical strain and electric field on C3As/arsenene heterostructure
Autor: | Sanjeev K. Gupta, Shivam Kansara, Yogesh Sonvane |
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Rok vydání: | 2019 |
Předmět: |
Materials science
Condensed matter physics Phonon Materials Science (miscellaneous) Photodetector Heterojunction 02 engineering and technology Cell Biology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Condensed Matter::Materials Science Electric field Dispersion (optics) Density functional theory Electrical and Electronic Engineering Physical and Theoretical Chemistry 0210 nano-technology Absorption (electromagnetic radiation) Biotechnology Visible spectrum |
Zdroj: | Applied Nanoscience. 10:107-116 |
ISSN: | 2190-5517 2190-5509 |
DOI: | 10.1007/s13204-019-01034-0 |
Popis: | Here, we have focused on electronic and optical properties of heterostructure C3As/arsenene under vertical strain and electric field using density functional theory. The phonon dispersion calculation reveals the stability of the monolayer C3As. In addition, the tunable electronic properties of heterolayer C3As/arsenene have been discussed by addressing vertical strain and electric field. The bandgaps were tuned from 0.75 to 1.6 eV as indirect-to-direct transition by accounting vertical strain and for electric field, it is decreases upto 0.25 eV. The modulation of the strain and electric field in C3As/arsenene heterolayer was investigated by the interlayer interaction strength of the layers. Moreover, the calculated optical absorption shows the strongly in UV, while weakly absorption in the visible spectrum. Therefore, the results show good structure tunablity by external strain and electric field for electronic photodetector device applications. |
Databáze: | OpenAIRE |
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