Efficient frequency-domain simulation technique for short-channel MOSFET

Autor: Young June Park, Chanho Lee, Kyu Il Lee, Hong Shick Min, Hyungsoon Shin
Rok vydání: 2005
Předmět:
Zdroj: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 24:862-868
ISSN: 0278-0070
DOI: 10.1109/tcad.2005.847896
Popis: This paper proposes and investigates a short-channel MOSFET model down to a 0.1-/spl mu/m regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.
Databáze: OpenAIRE