Efficient frequency-domain simulation technique for short-channel MOSFET
Autor: | Young June Park, Chanho Lee, Kyu Il Lee, Hong Shick Min, Hyungsoon Shin |
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Rok vydání: | 2005 |
Předmět: |
Total harmonic distortion
Engineering business.industry Displacement current Computer Graphics and Computer-Aided Design Harmonic balance Terminal (electronics) Frequency domain MOSFET Electronic engineering Electrical and Electronic Engineering Current (fluid) business Software Communication channel |
Zdroj: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 24:862-868 |
ISSN: | 0278-0070 |
DOI: | 10.1109/tcad.2005.847896 |
Popis: | This paper proposes and investigates a short-channel MOSFET model down to a 0.1-/spl mu/m regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments. |
Databáze: | OpenAIRE |
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