Adsorption characteristics of parent and copper-sputtered RD silica gels

Autor:	Shigeru Koyama, Bidyut Baran Saha, Anutosh Chakraborty, Jong-boong Lee, Jingming He, Kim Choon Ng
Rok vydání:	2007
Předmět:	Materials science Silica gel chemistry.chemical_element Mineralogy Liquid nitrogen Sputter deposition Condensed Matter Physics Copper chemistry.chemical_compound Adsorption Chemical engineering chemistry Sputtering Desorption Surface modification
Zdroj:	Philosophical Magazine. 87:1113-1121
ISSN:	1478-6443 1478-6435
DOI:	10.1080/14786430601032386
Popis:	Surface modification of type RD silica gel was achieved by depositing layers of thin-film copper on the parent silica gel surfaces so as to improve their performances, circumventing the poor thermal conductivity of the adsorbent. Porous properties (surface area, pore size and volume) were determined using nitrogen adsorption/desorption isotherm measurements, which were performed on adsorbents for both parent and Cu-sputtered silica gels in liquid nitrogen at a temperature of 77.4 K. The copper sputtering experiments were conducted in a chamber of inert argon gas where the chamber was bombarded with a radio frequency (RF) of 13.56 MHz. The comparative performance of the parent and Cu-sputtered silica gels was determined via various key measurements such the Brunauer–Emmett–Teller (BET), the Horvath and Kawazoe (HK) and the hot-disc sensor methods.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5e0f0619874eb8b6812c840ee01e0944 https://doi.org/10.1080/14786430601032386 Zobrazit plný text záznamu