In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications

Autor:	Francesco Serra Di Santa Maria, Christoforos Theodorou, Francis Balestra, Gerard Ghibaudo, Eunjung Cha, Cezar B. Zota
Rok vydání:	2022
Zdroj:	ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
DOI:	10.1109/essderc55479.2022.9947142
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d75f07b659cef80789c4ca430c9b191 https://doi.org/10.1109/essderc55479.2022.9947142 Zobrazit plný text záznamu