Fully valley- and spin-polarized magnetocapacitance in n-type monolayer MoS2
Autor: | Ma Zhou, Guanghui Zhou, Xiaoying Zhou, Yiman Liu, Huaihua Shao |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Applied Physics Express. 7:021201 |
ISSN: | 1882-0786 1882-0778 |
DOI: | 10.7567/apex.7.021201 |
Popis: | We present a theoretical investigation on the quantum magnetocapacitance (MC) for n-type monolayer MoS2 under a perpendicular magnetic field. We find that the MC clearly reflects the valley- and spin-resolved Landau levels (LLs). Interestingly, the MC is fully valley- and spin-polarized, which results in perfect square-wave-shaped polarization. This fully valley- and spin-polarized MC, especially the peak corresponding to the lowest LL, may be of great significance in valleytronic and spintronic device applications because it provides a magnetic method to control the electron valley and spin degrees of freedom. The MC behavior as a function of the magnetic field is also discussed. |
Databáze: | OpenAIRE |
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