Fully valley- and spin-polarized magnetocapacitance in n-type monolayer MoS2

Autor: Ma Zhou, Guanghui Zhou, Xiaoying Zhou, Yiman Liu, Huaihua Shao
Rok vydání: 2014
Předmět:
Zdroj: Applied Physics Express. 7:021201
ISSN: 1882-0786
1882-0778
DOI: 10.7567/apex.7.021201
Popis: We present a theoretical investigation on the quantum magnetocapacitance (MC) for n-type monolayer MoS2 under a perpendicular magnetic field. We find that the MC clearly reflects the valley- and spin-resolved Landau levels (LLs). Interestingly, the MC is fully valley- and spin-polarized, which results in perfect square-wave-shaped polarization. This fully valley- and spin-polarized MC, especially the peak corresponding to the lowest LL, may be of great significance in valleytronic and spintronic device applications because it provides a magnetic method to control the electron valley and spin degrees of freedom. The MC behavior as a function of the magnetic field is also discussed.
Databáze: OpenAIRE