Surface structures of tetrahedrally coordinated semiconductors: principles, practice, and universality

Autor: C.B. Duke
Rok vydání: 1993
Předmět:
Zdroj: Applied Surface Science. :543-552
ISSN: 0169-4332
DOI: 10.1016/0169-4332(93)90717-p
Popis: During the past decade nearly 100 tetrahedrally coordinated semiconductor surface structures, consisting of both clean surfaces and adsorbate structures, have been predicted theoretically, determined experimentally, or both. Examination of this body of work leads to the recognition that certain general features of the results can be abstracted and utilized as qualitative “principles” to predict new surface structures and to interpret the nature of the surface chemical bonding of such materials. These principles include consequences of the bulk tetrahedral covalent bonding, of the surface topology, and of the charge neutrality (autocompensation) of the surface. They are compatible with the recognition that new types of surface chemical bonding occur, which are distinct from those in both molecules and bulk solids, because of the energetic mandate to form chemical bonds in the presence of geometrical constraints imposed by the requirement of epitaxy on the bulk substrate. To illustrate these principles, we apply them to interpret the known scaling laws characteristic of the relaxed atomic geometries of the (110) cleavage surfaces of zincblende structure III–V, II–VI, and I–VII compound semiconductors. Their extension to adsorption systems is indicated for Sb and Bi p(1 × 1) epitaxial overlayers on these surfaces. It is suggested that in certain circumstances semiconductor surfaces can exhibit universal structures, essentially independent of the specific material, once appropriate scaling laws are applied. When true, this universality leads to a 1 : 1 correspondence between the equilibrium structure of a given surface and the bulk structure type of the underlying substrate.
Databáze: OpenAIRE