Studying a Silica Film Implanted with Zn and Irradiated with Swift Xe Ions

Autor:	V.A. Skuratov, V. S. Kulikauskas, A. N. Tereshchenko, Dmitry A. Kiselev, A. N. Palagushkin, E. A. Steinman, A. A. Burmistrov, Vladimir Privezentsev, O. S. Zilova, V. V. Zatekin
Rok vydání:	2019
Předmět:	010302 applied physics Photoluminescence Materials science 010308 nuclear & particles physics Projective range Exciton Analytical chemistry General Physics and Astronomy Nanoparticle 01 natural sciences Amorphous solid Ion 0103 physical sciences Irradiation Hillock
Zdroj:	Bulletin of the Russian Academy of Sciences: Physics. 83:1332-1339
ISSN:	1934-9432 1062-8738
Popis:	The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around 10 nm in size at a depth near the projective range of zinc ions (Rp ≈ 40 nm) in the SiO2 film. Xe irradiation of the film dampens the exciton recombination–induced peak in the photoluminescence spectrum at a wavelength of 370 nm. It also raises the peak at 430 nm, which is associated with radiation defects. Bombarding the surface of the SiO2 film with Хе ions results in the formation of surface craters surrounded by hillocks, and the emergence of Zn-containing nanoparticles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5bfab597dedd443d340a30f80dce1ab2 https://doi.org/10.3103/s1062873819110194 Zobrazit plný text záznamu Full text from SpringerLink