A plasma doping process for 3D finFET source/drain extensions
| Autor: | Wang Cuiyang, Harold Persing, Helen L. Maynard, Shan Tang, Siamak Salimian, Keping Han |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Dopant Doping Analytical chemistry chemistry.chemical_element Plasma Fin (extended surface) Secondary Ion Mass Spectroscopy Condensed Matter::Materials Science chemistry Condensed Matter::Superconductivity Physics::Atomic and Molecular Clusters Spectroscopy Transmission electron spectroscopy Arsenic |
| Zdroj: | 2014 20th International Conference on Ion Implantation Technology (IIT). |
| DOI: | 10.1109/iit.2014.6939993 |
| Popis: | A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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