Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet
| Autor: | Jean-Yves Duboz, Y. Gourdel, J. P. Truffer, Eric Frayssinet, J. L. Reverchon, Julien Brault, Shailendra Bansropun, Eric Costard, K. Robin, J. A. Robo |
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| Rok vydání: | 2009 |
| Předmět: |
Physics
Silicon business.industry General Engineering Schottky diode chemistry.chemical_element Astronomy and Astrophysics Substrate (electronics) medicine.disease_cause Photodiode law.invention Responsivity Optics chemistry Space and Planetary Science law medicine Sapphire Optoelectronics business Ultraviolet Dark current |
| Zdroj: | EAS Publications Series. 37:207-215 |
| ISSN: | 1638-1963 1633-4760 |
| DOI: | 10.1051/eas/0937026 |
| Popis: | The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays for low flux measurements. First, we will present results on focal plane array of 320 × 256 pixels with a pitch of 30 μ m. The peak responsivity is tuned from 260 nm to 360 nm in different cameras. All these results are obtained in a standard SWIR supply chaine and with AlGaN Schottky diodes grown on sapphire. We will present here the first attempts to transfer the standard design Schottky photodiodes on from sapphire to silicon substrates. We will show the capability to remove the silicon substrate, to etch the window layer in order to extend the band width to lower wavelength and to maintain the AlGaN membrane integrity. |
| Databáze: | OpenAIRE |
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