Theory of electron Raman scattering in a semiconductor core/shell quantum well wire

Autor: Ri. Betancourt-Riera, A.D. Sañu-Ginarte, Re. Betancourt-Riera, L.A. Ferrer-Moreno
Rok vydání: 2019
Předmět:
Zdroj: Physica B: Condensed Matter. 563:93-100
ISSN: 0921-4526
DOI: 10.1016/j.physb.2019.04.004
Popis: A study of the electron states of a semiconductor core/shell quantum well wire and the electron Raman scattering are presented. Thus, the system has been modeled considering a G a A s / A l x G a 1 − x A s / A l A s structure. To carry out this study, the exact mathematical expressions that describe the electron states and the Raman differential cross-section in the aforementioned system were obtained. Our model considers T = 0 K and that, as a consequence of the presence of the confinement, the electron bands unfold in a subband system. In addition, the expressions that describe the differential cross-section and the selection rules for the emission spectra are shown. On the other hand, the net gain of Raman is studied through the transition rate, since they are directly proportional. It should be point out that our results are compared with the results obtained in previous works, especially with the step-quantum well wire. Finally, it is shown that although the core/shell quantum well wire and the step-quantum well wire are very similar systems, the Raman net gain for the step-quantum well wire is much greater than the one for the core/shell quantum well wire.
Databáze: OpenAIRE