Laser‐induced etching of silicon in hydrofluoric acid
| Autor: | J. R. Brock, P. Lim, I. Trachtenberg |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon fungi Doping technology industry and agriculture Analytical chemistry Mineralogy chemistry.chemical_element macromolecular substances Laser Fluence Isotropic etching law.invention chemistry.chemical_compound Hydrofluoric acid stomatognathic system chemistry law Etching (microfabrication) Irradiation |
| Zdroj: | Applied Physics Letters. 60:486-488 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.106644 |
| Popis: | Laser‐assisted wet etching (LAWE) of n‐silicon using a 514.5‐nm line from a cw argon‐ion laser in the presence of hydrofluoric acid is reported. The effects of laser fluence, doping level, and acid concentration on the etch rate are investigated. By LAWE, vias and lines can be rapidly etched with smooth profiles under conditions described. |
| Databáze: | OpenAIRE |
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