XPS study of XeCl excimer-laser-etched InP
| Autor: | J. Fraser, David M Wieliczka, C. E. Moffitt, J.M. Wrobel, Jan J. Dubowski |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Excimer laser
Scanning electron microscope Chemistry medicine.medical_treatment Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Laser Fluence Spectral line Surfaces Coatings and Films law.invention X-ray photoelectron spectroscopy law Etching (microfabrication) medicine Wafer |
| Zdroj: | Applied Surface Science. :805-809 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(97)00746-0 |
| Popis: | X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) have been applied to investigate the surface chemistry and morphology of InP wafers photochemically etched under 308 nm illumination from a XeCl excimer laser. The etching experiments were carried out at ambient temperature and in a low-pressure (1 μ bar) atmosphere of Cl 2 (10%) diluted in He. During the process, the samples were exposed to laser radiation with fluences of 73 mJ/cm 2 or 114 mJ/cm 2 . Both fluence values are below the ablation threshold of 140 mJ/cm 2 for InP. The mapping of the photoelectron spectral line intensities of In (3d 5/2 ), Cl (2p 3/2 ), and P (2p 3/2 ) displayed the distribution of In–Cl and In–P compounds on the surface of the wafer. The chemical composition and morphology of the etched surface were found to be dependent on laser fluence. Surfaces with a fine granular structure were observed at a lower fluence, while at higher fluences, surfaces with a linear grating-like structure were formed. More chlorine is bound to the surface prepared at a higher fluence. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect