Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD
| Autor: | Zhenguo Song, Ti Ning, Feng Ji, Caina Luan, Xuan Pei, Yongliang Tan, Jin Ma |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) Inorganic chemistry Doping Biophysics Analytical chemistry General Chemistry Chemical vapor deposition Condensed Matter Physics Biochemistry Acceptor Atomic and Molecular Physics and Optics Atomic ratio Metalorganic vapour phase epitaxy Thin film |
| Zdroj: | Journal of Luminescence. 130:1189-1193 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2010.02.019 |
| Popis: | Gallium-doped tin oxide (SnO2:Ga) films have been prepared on α-Al2O3 (0 0 0 1) substrates at 500 °C by the pulse mode metalorganic chemical vapor deposition (MOCVD) method. The relative amount of Ga (Ga/(Ga+Sn) atomic ratio) varied from 3% to 15%. Post-deposition annealing of the films was carried out at different temperatures for 1.5 h in ambient atmosphere . The structural, electrical, optical and photoluminescence (PL) properties of the films have been investigated as a function of annealing temperature. All the films have the rutile structure of pure SnO2 with a strong (2 0 0) preferred orientation. A single ultraviolet (UV) PL peak near 337.83 nm was observed at room temperature for the 3% Ga-doped as-grown film and near 336 nm for the 15%-doped film, which can be ascribed to electron transition from the oxygen vacancy and interstitial Ga3+ donor levels to the acceptor level formed by the substitution of Ga3+ for the Sn site. After annealing, the luminescence spectra have changed a little bit, which is being discussed in detail. |
| Databáze: | OpenAIRE |
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