Submicrometre gate length scaling of inversion channel heterojunction field effect transistor

Autor:	Miroslav Micovic, P.A. Evaldsson, P.R. Claisse, A. Lepore, P.A. Kiely, K.F. Brown-Goebeler, Geoffrey W. Taylor, Roger J. Malik, F.G. Storz, T. Vang, D.P. Docter
Rok vydání:	1994
Předmět:	Materials science Heterojunction field effect transistor business.industry Gate length Inversion (meteorology) Gallium arsenide chemistry.chemical_compound chemistry Ternary compound Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Scaling Quantum well
Zdroj:	Electronics Letters. 30:529-531
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el:19940354
Popis:	The scaling to 0.5 µm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm = 205 mS/mm and VTH = –0.34 V have been obtained for 0.5 × 100 µm2 devices. For shorter gate lengths, threshold shifts are sizeable so that in order to scale further, modifications to the growth and processing are required.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::599706e55e6765c11d7bb9f779c09afa https://doi.org/10.1049/el:19940354 Zobrazit plný text záznamu