Holmium-related luminescence in crystalline silicon

Autor:	Z. F. Krasilnik, Nikolai A. Sobolev, A. M. Emel’yanov, Yu.A. Nikolaev, Boris A. Andreev
Rok vydání:	2001
Předmět:	Photoluminescence Materials science Silicon Annealing (metallurgy) Mechanical Engineering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Ion Ion implantation chemistry Mechanics of Materials Impurity General Materials Science Luminescence Holmium Nuclear chemistry
Zdroj:	Materials Science and Engineering: B. 81:176-178
ISSN:	0921-5107
Popis:	The influence of annealing temperature of Si:Ho:O structures prepared by solid phase epitaxial technique on the photoluminescence spectra at 4.2 K was studied. The ions of Ho at 1 MeV energy and 1 x 10 14 cm - 2 dose and O at 0.14 MeV and 1 x 10 15 cm 2 were implanted in p-Cz-Si. A fine structure of Ho-related light-emitting centers was measured with a resolution of up to 1 cm -1 in the range 3000-12 000 cm -1 . A variation of Ho-related luminescence intensity in dependence on the annealing temperature is due to the transformation of the centers. Several Ho-related centers with sharp and wide lines are observed. We believe that the Ho 3 + ions in the centers with the sharp and wide lines have a different surrounding - oxygen atom(s) and glass-like shell in their neighborhood, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::595bf2c8b07d934163aa895d1bfbd768 https://doi.org/10.1016/s0921-5107(00)00731-5 Zobrazit plný text záznamu Full Text from ScienceDirect