InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength
| Autor: | Karn Rongrueangkul, Suwat Sopitpan, Aniwat Tandaechanurat, Panithan Srisinsuphya, R. Khanchaitham, Visittapong Yordsri, Chanchana Thanachayanont, Somsak Panyakeow, Songphol Kanjanachuchai, Supachok Thainoi, Suwit Kiravittaya, Noppadon Nuntawong, Somchai Ratanathammaphan |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Spectral line Blueshift Inorganic Chemistry Condensed Matter::Materials Science Wavelength 0103 physical sciences Materials Chemistry Optoelectronics Light emission 0210 nano-technology business Quantum Astrophysics::Galaxy Astrophysics Excitation Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 514:36-39 |
| ISSN: | 0022-0248 |
| Popis: | Distinct InSb/InAs quantum nano-stripes possessing type-II band alignment with a broken gap are grown using molecular beam epitaxy with low substrate temperature and slow growth rate, aiming for light emission in a mid-infrared range. The quantum nano-stripes are shown to emit light at a wavelength of 3.1 µm. The excitation power dependence of photoluminescence spectra from the quantum nano-stripes reveals a clear linear blueshift with the third root of the excitation power, which is a unique property of the quantum nanostructures with type-II band alignment. The demonstrated mid-infrared light emission from the InSb/InAs quantum nano-stripes would offer a promising pathway for realizing practical, highly-efficient, and room-temperature-operating mid-infrared light sources and detectors. |
| Databáze: | OpenAIRE |
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