Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

Autor: Andrew D. Koehler, Steven C. Moss, Karl D. Hobart, E. C. Dillingham, Michael A. Tockstein, N. J-H. Roche, Travis J. Anderson, Ani Khachatrian, S. D. LaLumondiere, Dale McMorrow, Veronique Ferlet-Cavrois, Petras Karuza, J. P. Bonsall, M. Mushitiello, S. P. Buchner, Nathan P. Wells, Dale Brewe, William T. Lotshaw
Rok vydání: 2017
Předmět:
Zdroj: 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Popis: The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.
Databáze: OpenAIRE