Physical degradation of GaN HEMT devices under high drain bias reliability testing
| Autor: | Tony Balistreri, S.Y. Park, Jose L. Jimenez, C. Lee, M. J. Kim, Paul Saunier, Edward Beam, Carlo Floresca, U. Chowdhury |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Electrical engineering Heterojunction High-electron-mobility transistor Condensed Matter Physics Epitaxy Accelerated aging Focused ion beam Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) Reliability (semiconductor) Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 49:478-483 |
| ISSN: | 0026-2714 |
| Popis: | The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC substrates. Standard III–V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accelerated DC life-tests with base-plate temperatures of 82, 112, and 142 C. Drain bias of 40 V and time-zero drain current of 250 mA/mm were applied. TEM samples were prepared via the lift-out technique using a focused ion beam (FIB). TEM analysis revealed that electrically degraded devices always contain a pit-like defect next to the drain in the top AlGaN layer. It has been found that the degree of the defect formation strongly correlates to drain current (IDmax) degradation. |
| Databáze: | OpenAIRE |
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