Annealing studies on GaN hydride vapor phase epitaxial layers
| Autor: | Donald C. Reynolds, Richard J. Molnar, David C. Look, T. Wille, T. C. Collins, K. K. Bajaj |
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| Rok vydání: | 1999 |
| Předmět: |
Photoluminescence
Phonon Annealing (metallurgy) Chemistry Hydride Astrophysics::High Energy Astrophysical Phenomena Binding energy General Chemistry Condensed Matter Physics Epitaxy Molecular physics Spectral line Condensed Matter::Materials Science Crystallography Materials Chemistry Emission spectrum |
| Zdroj: | Solid State Communications. 109:683-686 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/s0038-1098(99)00016-2 |
| Popis: | A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a temperature of ∼835°C. The as-grown sample, and the same sample annealed at 830°C, show a single dominant donor-bound-exciton (D0, X) emission line. After annealing at ∼835°C, the emission evolves into at least four broader emission lines. Increasing the annealing temperature to 840°C reverses the emission spectrum back to the single D0, X line. Repeating the 835°C anneal again produces the evolved spectrum. We propose a model that can account for all of the spectral lines that are generated by the 835°C anneal. We also suggest some possible explanations for the dramatic changes that occur in the emission spectrum when the annealing is carried out over small temperature intervals. |
| Databáze: | OpenAIRE |
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