Auger and energy loss spectroscopy analysis of silicon carbide (SiC) surfaces
| Autor: | C. Jardin, M Bouslama, D Kadri, M Ghamnia |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Auger electron spectroscopy
Materials science Silicon Electron energy loss spectroscopy Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Auger chemistry.chemical_compound chemistry Silicon carbide Graphite Instrumentation Carbon |
| Zdroj: | Vacuum. 47:141-143 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/0042-207x(95)00196-4 |
| Popis: | Auger electron spectroscopy and electron loss spectroscopy were used with different (SiC) samples. The α-SiC(0001) surface of industrial silicon carbide crystals, a (SiC) compound resulting from the implantation of carbon at 30 keV into a silicon substrate and β-SiC layers formed by evaporation of carbon on Si(111) at 1080 °C were analysed. Characteristic Si-LVV and C-KVV Auger spectra of band type structure, recorded in N(E) mode, are related to silicon carbide. These spectra are detected from α-SiC, β-SiC layers and from the substrate layers of the implanted samples as revealed after argon ion beam etching. Heat treatment of the samples in UHV induced the formation of excess carbon at the surface. The Auger and loss spectra of such a C-rich surface are compared to those of pure graphite. |
| Databáze: | OpenAIRE |
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