Low Temperature Solid State Bonding of Cu-In Fine-Pitch Interconnects
| Autor: | Wataru Tachikawa, Steffen Bickel, M. Jurgen Wolf, Iuliana Panchenko |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Work (thermodynamics) Interconnection business.product_category Materials science 020208 electrical & electronic engineering Intermetallic Solid-state Fine pitch 02 engineering and technology 01 natural sciences Phase formation Shear (sheet metal) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Die (manufacturing) Composite material business |
| Zdroj: | 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC). |
| DOI: | 10.1109/estc48849.2020.9229826 |
| Popis: | Cu-In fine pitch interconnects are a viable approach for low temperature bonding technologies in 2.5 D and 3D integration. The unique metallurgical phenomena regarding the phase formation and growth of intermetallic compounds (IMCs) in the Cu-In system affect both processing conditions and the resulting interconnection properties. In this work, we investigate the formation Cu-In joints below 150 °C, i.e. in the solid state, under ambient conditions. Dies with Cu interconnects and In caps (25 µm diameter, 55 µm pitch) were bonded in a flip-chip process at moderate pressures and subsequently investigated by means of mechanical testing, cross-sectioning and microstructural analysis. In particular, we reveal the presence of stable interconnects exhibiting a ductile bonding zone. The resulting die shear strengths are in the range of 15-20 MPa. |
| Databáze: | OpenAIRE |
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