Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
| Autor: | Xuejian Xie, Yan Peng, P. Yu, Xian Gang Xu, Xianglong Yang, Ruiqi Wang, Xiaobo Hu, Xiufang Chen |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Phonon Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention Condensed Matter::Materials Science symbols.namesake law Electrical resistivity and conductivity Hall effect Condensed Matter::Superconductivity Eddy current General Materials Science Argon Mechanical Engineering 010401 analytical chemistry Doping Anharmonicity 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences chemistry Mechanics of Materials symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | Materials Science Forum. 897:307-310 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.307 |
| Popis: | Different nitrogen-doped 4H-SiC single crystals were grown by the physical vapor transport method through mixing nitrogen gas to the argon growth atmosphere in the composition range from 0% to 10%. The electrical properties of the crystals, including resistivity and mobility were measured by Hall effect and contactless eddy current measurements. The Raman spectra of different N-doped 4H-SiC single crystals were investigated from 173 to 473 K. The temperature and doping dependence of optical modes was analyzed with anharmonic effect. The phonon lifetime was derived from the linewidths of Raman spectra via the energy-time uncertainty relation. |
| Databáze: | OpenAIRE |
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