Influence of the spin-orbit split-off valence band inInxGa1−xAs/AlyGa1−yAs strained-layer quantum wells
Autor: | L. K. Howard, Bernard Gil, David J. Dunstan, Pierre Lefebvre, P. Boring |
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Rok vydání: | 1992 |
Předmět: |
chemistry.chemical_classification
Physics X-ray absorption spectroscopy Condensed matter physics chemistry.chemical_element Spin–orbit interaction Electronic structure 01 natural sciences 010309 optics symbols.namesake chemistry Excited state 0103 physical sciences symbols 010306 general physics Hamiltonian (quantum mechanics) Inorganic compound Indium Solid solution |
Zdroj: | Physical Review B. 45:3906-3909 |
ISSN: | 1095-3795 0163-1829 |
Popis: | Quantum-well ground and excited states are observed using wavelength-modulated reflectivity in ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/${\mathrm{Al}}_{\mathit{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$As single-quantum-well structures. To account for the dependence of their energies on indium and aluminum concentrations, we find that it is necessary to include the coupling between the light-hole ${\mathrm{\ensuremath{\Gamma}}}_{8}$ valence band and the spin-orbit split-off ${\mathrm{\ensuremath{\Gamma}}}_{7}$ valence band. The calculation is performed using a two-band envelope-function approximation, and good agreement with experiment is obtained. |
Databáze: | OpenAIRE |
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