Intrinsic spin-valley locking for conducting electrons in metal-semiconductor-metal lateral heterostructures of 1H -transition-metal dichalcogenides

Autor: Tetsuro Habe
Rok vydání: 2022
Zdroj: Physical Review B. 105
ISSN: 2469-9969
2469-9950
DOI: 10.1103/physrevb.105.115401
Databáze: OpenAIRE