Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Autor:	E. V. Kontrosh, Viacheslav M. Andreev, V. S. Yuferev, V. S. Kalinovskii, G. V. Klimko, D. Y. Kazantsev, Stefan Ivanov, Boris Ya. Ber
Rok vydání:	2020
Předmět:	010302 applied physics Materials science business.industry 02 engineering and technology Radiation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law Condensed Matter::Superconductivity 0103 physical sciences Tunnel diode Optoelectronics Nanometre Optical radiation 0210 nano-technology business Layer (electronics) Diode
Zdroj:	Semiconductors. 54:355-361
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782620030112
Popis:	The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of high-power optical radiation. Basing on numerical simulation of the J–U characteristics of tunnel diodes, a method is proposed for increasing the peak tunneling-current density by including a thin undoped i-type layer with a thickness of several nanometers between degenerate layers of the tunnel diode. The p–i–n-GaAs/Al0.2Ga0.8As structures of the connecting tunnel diodes with a peak tunneling-current density of up to 200 A/cm2 are grown by molecular-beam epitaxy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::55c9fec9bca040717892d3335327f6ed https://doi.org/10.1134/s1063782620030112 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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