Si1−xGex/Si multiple quantum wells on Si(100) and Si(110) for infrared absorption
| Autor: | T. L. Kreifels, R. L. Hengehold, Yung Kee Yeo, Phillip E. Thompson, David S. Simons |
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| Rok vydání: | 1995 |
| Předmět: |
Photoluminescence
Materials science Silicon business.industry Band gap Superlattice Doping chemistry.chemical_element Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Fourier transform spectroscopy Surfaces Coatings and Films Condensed Matter::Materials Science chemistry Optoelectronics business Quantum well Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:636-641 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.579798 |
| Popis: | Optical emission and absorption properties of Si1−xGex/Si superlattices grown on (100) and (110) Si substrates were investigated to determine the optimal growth conditions for these structures to be used as infrared detectors. Fully strained Si1−xGex/Si superlattices were grown by molecular beam epitaxy (MBE) and examined using low‐temperature photoluminescence to identify no‐phonon and phonon‐replica interband transitions across the alloy band gap. Phonon‐resolved emission was most intense for undoped quantum wells grown at 710 °C for both silicon orientations. Room‐temperature absorption measurements were conducted on (100) and (110) Si1−xGex/Si superlattices using Fourier transform spectroscopy while varying incident electric field polarization. Strong intersubband absorption was observed at 7.8 μm from a sample composed of 15 quantum wells of 40 A Si0.8Ge0.2 separated by 300 A of Si grown on (100) Si by MBE at 550 °C. Valence band wells were doped with a boron concentration of 5×1019 cm−3. No intersub... |
| Databáze: | OpenAIRE |
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