Calculation of boron segregation at the Si(100)/SiO2interface

Autor: Hiroshi Tsuji, Masayuki Tachi, Tetsuya Hirose, Masayuki Furuhashi, Kenji Taniguchi
Rok vydání: 2004
Předmět:
Zdroj: The European Physical Journal Applied Physics. 27:163-166
ISSN: 1286-0050
1286-0042
DOI: 10.1051/epjap:2004136
Popis: The stability of B atom near the Si(100)/SiO 2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO 2 interface. Contrary to the experimental observations showing that B atoms segregate into SiO 2 , B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO 2 , the B atom is trapped by the O vacancy and becomes quite stable in SiO 2 .
Databáze: OpenAIRE