Calculation of boron segregation at the Si(100)/SiO2interface
Autor: | Hiroshi Tsuji, Masayuki Tachi, Tetsuya Hirose, Masayuki Furuhashi, Kenji Taniguchi |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | The European Physical Journal Applied Physics. 27:163-166 |
ISSN: | 1286-0050 1286-0042 |
DOI: | 10.1051/epjap:2004136 |
Popis: | The stability of B atom near the Si(100)/SiO 2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO 2 interface. Contrary to the experimental observations showing that B atoms segregate into SiO 2 , B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO 2 , the B atom is trapped by the O vacancy and becomes quite stable in SiO 2 . |
Databáze: | OpenAIRE |
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