AlGaInN high-power lasers grown on an ELO-GaN layer

Autor:	Masao Ikeda, Takeharu Asano, Tsuyoshi Tojyo, Etsuo Morita, Katsunori Yanashima, Shiro Uchida, Tsuneyoshi Aoki, Satoru Kijima, Masafumi Ozawa, Shinichi Ansai, Toshimasa Kobayashi, Tsunenori Asatsuma, Tomonori Hino, Yoshifumi Yabuki, Katsuyoshi Shibuya, Shinro Ikeda, Motonobu Takeya
Rok vydání:	2000
Předmět:	Materials science business.industry Chemical vapor deposition Condensed Matter Physics Epitaxy Laser Semiconductor laser theory law.invention Inorganic Chemistry law Materials Chemistry Sapphire Optoelectronics Wafer Metalorganic vapour phase epitaxy business Layer (electronics)
Zdroj:	Journal of Crystal Growth. 221:646-651
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(00)00793-4
Popis:	Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure metal-organic chemical vapor deposition (MOCVD). In order to determine the effect of ELO-GaN layer on the reliability of blue–violet laser diodes (BV-LDs), we fabricated BV-LDs on the lateral-growth region of the ELO-GaN layer. The thickness of the ELO-GaN layer was maintained at 5 μm to inhibit wafer bending, so the total thickness of the BV-LDs was approximately 7 μm. The lifetime of the BV-LDs with a constant output power of 20 mW under CW operation at 25°C was more than 500 h. This lifetime is several times that of our conventional BV-LDs on sapphire substrates. The ELO-GaN layer was very effective in raising the lifetime of BV-LDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::54b6737bd6840b55d14710ec48b44384 https://doi.org/10.1016/s0022-0248(00)00793-4 Zobrazit plný text záznamu Full Text from ScienceDirect