Popis: |
The sintering behavior, microstructure and microwave dielectric properties of BiNb 1− x Mo x O 4 ( x = 0.005, 0.01, 0.03 and 0.05) ceramics have been investigated. The phase-forming temperature (from orthorhombic to triclinic phase) of BiNb 1− x Mo x O 4 ceramics during sintering is lower than that (1024 °C) of BiNbO 4 ceramics. The variations of dielectric constant, Q value and temperature coefficient of resonant frequency are also investigated. A defect dipole model is proposed for the explanation of dielectric behavior of MoO 3 -doped BiNbO 4 ceramics. |