Application of the transition semiconductor to semimetal in type II nanostructure superlattice for mid-infrared optoelectronic devices
| Autor: | A. Hannour, Thami El Gouti, Abderrazak Boutramine, Driss Barkissy, Abdellatif Elanique, Abdelhakim Nafidi |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Nanostructure Condensed matter physics business.industry Band gap Superlattice 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Cutoff frequency Semimetal Wavelength Semiconductor 0103 physical sciences Optoelectronics General Materials Science 010306 general physics 0210 nano-technology business Electronic band structure |
| Zdroj: | Applied Physics A. 122 |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | The present work is devoted to the study of band structure and band gap in symmetric InAs (d 1 = 25 A)/GaSb (d 2 = 25 A) type II superlattice. Our calculations were performed in the envelope function formalism with the valence band offset Λ = 570 meV. We discussed the semiconductor to semimetal transition and the evolutions of the fundamental band gap, E g (Γ), as a function of d 1, Λ and the temperature. This study suggests that a wide range of wavelength can be reached by adjusting d 1. In addition, E g (Γ, T) decreases from 288.7 to 230 meV in the range of 4.2–300 K, corresponding to the cutoff wavelength ranging from 4.3 to 5.4 µm. These latter results explain the recent experimental ones realized by C. Cervera et al. for our Λ = 588 meV. |
| Databáze: | OpenAIRE |
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