Role of Planar Defects in Compound Semiconductor Crystals: From Growth of Nanomasts & Nanosails to Processing Light Emission in DualBeam FIB/SEM
| Autor: | Ilan Shalish, Venkatesh Narayanamurti, WJ MoberlyChan, J Tringe |
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| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Microscopy and Microanalysis. 13 |
| ISSN: | 1435-8115 1431-9276 |
| Popis: | When crystals are made smaller than a grain, grain boundaries and 3-dimensional defects are no longer a concern. The free surfaces of nanometer-scale crystals dominate the energy considerations, and even the strain energy of 1dimensional defects cannot be contained, causing dislocations to leave during bending, both during growth and stress [1]. Fortunately, point (0-D) defects can be contained, and impurities compensated for by doping, thereby enabling the production of robust p/n junctions in semiconductor nanowires. The fourth defect type, 2D-planar defects, however, not only can be common but can play a role to lower the overall energy of the crystal during growth [2] as well as play a role in optical and electrical properties. Future nanowires will have requirements of both direction and performance. For optical properties there is the further concern of containment, so that light does not escape from the sides [3]. The roles of planar defects on properties and structures need further study. |
| Databáze: | OpenAIRE |
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