Effects of AZO film as inductive layer and annealing temperature on microstructure crystallinity and electrical and optical properties of IGZO/SiO2 and IGZO/AZO/SiO2 specimens
| Autor: | Chang Shuo Chang, Chang Fu Han, You He Chen, Jen Fin Lin |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Indium gallium zinc oxide Materials science Annealing (metallurgy) Band gap Process Chemistry and Technology 02 engineering and technology 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Amorphous solid Crystallinity law Electrical resistivity and conductivity 0103 physical sciences Materials Chemistry Ceramics and Composites Composite material Crystallization 0210 nano-technology |
| Zdroj: | Ceramics International. 46:11089-11100 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2020.01.129 |
| Popis: | In the present study, annealing at three temperatures (800, 900, and 1000 °C) is applied to indium gallium zinc oxide (IGZO)/SiO2 specimens to investigate the effect of annealing temperature on amorphous IGZO (a-IGZO) crystallization. Then, IGZO/AZO/SiO2 specimens are prepared and annealed at 1000 °C to evaluate the effect of an Al-doped ZnO (AZO) film inserted between IGZO and an a-SiO2 substrate on a-IGZO crystallization to IGZO. The effects of annealing temperature and the AZO film on microstructure crystallization and optical and electrical properties are evaluated. The intensity of the X-ray diffraction peaks of crystalline IGZO increased with increasing annealing temperature. The insertion of the AZO film induced a-IGZO crystallization, which led to comparatively higher peak intensities for the IGZO/AZO/SiO2 specimen annealed at 1000 °C. The use of AZO film changed the In3+ hexagonal structure of the IGZO/SiO2 specimen with unequal bond lengths into the regular hexagonal structure of the IGZO/AZO/SiO2 specimens. Increasing the annealing temperature from 800 to 1000 °C slightly reduced (~0.09%) the transmittance of the IGZO/SiO2 specimens. The microstructure transformation due to AZO addition made the transmittance of the IGZO/AZO/SiO2 specimen annealed at 1000 °C only 1.46% lower than that of the IGZO/SiO2 specimen. A sufficiently high annealing temperature and/or the use of AZO film increases carrier concentration and mobility and decreases resistivity and band gap. AZO film can be used to induce the crystallization of a-IGZO to efficiently improve electrical properties without a significant loss in transmittance. |
| Databáze: | OpenAIRE |
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