GaN‐based high voltage transistors for efficient power switching

Autor:	Oliver Ambacher, Richard Reiner, Patrick Waltereit, Heiko Czap, Stefan Müller, Michael Mikulla, Detlef Peschel, Rudiger Quay
Rok vydání:	2013
Předmět:	Materials science business.industry Power switching High voltage transistors Transistor High voltage Nanotechnology Condensed Matter Physics Epitaxy law.invention law Optoelectronics business AND gate Voltage
Zdroj:	physica status solidi c. 10:831-834
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201200563
Popis:	We present results from GaN-based high voltage transistors used for power switching applications. The static and dynamic properties of transistors on SiC and Si substrates are determined. Overall, this technology is capable to deliver 1000 V breakdown and 95 A output current as well as a lower product of on-resistance and gate charge than conventional Si-based structures. Areas of further improvement in epitaxial growth and device processing are outlined in order to combine these high currents and high voltages in a single device. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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