Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs

Autor:	Jong-Lam Lee, Hyeongkwon Kim, Joon Seop Kwak, Sam Kyu Noh, Heuk Park, Hong-Koo Baik, Hong Man Kim
Rok vydání:	1995
Předmět:	Diffraction Materials science Physics and Astronomy (miscellaneous) Annealing (metallurgy) Isothermal annealing Metallurgy Contact resistance Doping Analytical chemistry Low resistance Ohmic contact Auger
Zdroj:	Applied Physics Letters. 67:2465-2467
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.114609
Popis:	Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400 °C under atmosphere ambient. X‐ray diffraction results and Auger depth profiles show that the good PdGe‐based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively.
Databáze:	OpenAIRE
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