A hybrid silicon carbide differential amplifier for 350 degrees C operation
| Autor: | W.C. Dillard, R.W. Johnson, Richard C. Jaeger, M. Tomana |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Transimpedance amplifier
Materials science Input offset voltage business.industry Amplifier General Engineering Electrical engineering Differential amplifier Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials law.invention Hybrid integrated circuit law Operational amplifier Optoelectronics MESFET Instrumentation amplifier Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 16:536-542 |
| ISSN: | 0148-6411 |
| DOI: | 10.1109/33.239885 |
| Popis: | An operational amplifier has been designed, fabricated, and tested at 350 degrees C using silicon carbide MESFET pairs and thick-film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350 degrees C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high-temperature circuit design and assembly using this approach. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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