Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topography

Autor: Daniel McCarthy, Martin C. Peckerar, David I. Ma, Syed B. Qadri
Rok vydání: 1992
Předmět:
Zdroj: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1012-1019
ISSN: 1520-8559
0734-2101
Popis: N‐channel metal–oxide–semiconductor field effect transistors (n‐MOSFETs) were biased under different operating conditions. Superficial silicon strain patterns were recorded by reflection mode double crystal topography. Stress redistributions caused by various applied electrical field (E) biases were observed. A comparison of the electrical field induced stress and mechanically induced stress was made. Based upon this result, the amount of bias induced stress was measured. X‐ray peak reflection intensity, the diffraction angle of this peak, and the full width at half‐maximum (FWHM) of the x‐ray double crystal rocking curves under various biases were also analyzed. All of these measurements indicate that a weak piezoelectric effect (WPE) exists in the superficial layers of MOS devices. A quantitative analysis of WPE modulus is also presented.
Databáze: OpenAIRE