Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topography
| Autor: | Daniel McCarthy, Martin C. Peckerar, David I. Ma, Syed B. Qadri |
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| Rok vydání: | 1992 |
| Předmět: |
Diffraction
Materials science Silicon business.industry chemistry.chemical_element Biasing Surfaces and Interfaces Condensed Matter Physics Piezoelectricity Surfaces Coatings and Films Stress (mechanics) Full width at half maximum Reflection (mathematics) Optics chemistry Optoelectronics Field-effect transistor business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1012-1019 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | N‐channel metal–oxide–semiconductor field effect transistors (n‐MOSFETs) were biased under different operating conditions. Superficial silicon strain patterns were recorded by reflection mode double crystal topography. Stress redistributions caused by various applied electrical field (E) biases were observed. A comparison of the electrical field induced stress and mechanically induced stress was made. Based upon this result, the amount of bias induced stress was measured. X‐ray peak reflection intensity, the diffraction angle of this peak, and the full width at half‐maximum (FWHM) of the x‐ray double crystal rocking curves under various biases were also analyzed. All of these measurements indicate that a weak piezoelectric effect (WPE) exists in the superficial layers of MOS devices. A quantitative analysis of WPE modulus is also presented. |
| Databáze: | OpenAIRE |
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