Electron traps in InGaP grown by gas source molecular beam epitaxy

Autor:	T. J. Vogt, G. Y. Robinson, H.S. Kim, L.M. Woods, A. Nanda, M.J. Hafich, G. A. Patrizi
Rok vydání:	1993
Předmět:	Range (particle radiation) Chemistry Doping Analytical chemistry General Physics and Astronomy Pulse duration Activation energy Trapping Electron Penning trap Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 74:1431-1433
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.355330
Popis:	Deep‐level transient spectroscopy has been used to characterize n‐type In0.48Ga0.52P grown by gas‐source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si‐doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::518473a2de918e39ae4eb904c0f170be https://doi.org/10.1063/1.355330 Zobrazit plný text záznamu