Planar disorder‐ and native‐oxide‐defined photopumped AlAs–GaAs superlattice minidisk lasers

Autor:	E. I. Chen, M. J. Ries, N. Holonyak
Rok vydání:	1996
Předmět:	Fabrication Materials science business.industry Superlattice Doping General Physics and Astronomy Laser law.invention Semiconductor laser theory Optics Planar law Etching (microfabrication) Optoelectronics business Refractive index
Zdroj:	Journal of Applied Physics. 79:8204-8209
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.362460
Popis:	Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 A AlAs, 30 A GaAs; 100 periods; ∼37 μm diameter) is defined by impurity‐induced layer disordering (IILD), followed by wet oxidation (N2+H2O vapor, 400 °C which surrounds the minidisk with a low‐refractive‐index AlGaAs oxide. The planar minidisks exhibit laser operation at λ∼7540 A, with wider mode separation (Δλ∼13 A) than disks defined by only IILD (a smaller refractive index step) and cleaved sample edges. The mode separation of Δλ∼13 A corresponds to disk modes that utilize the perimeter of the oxide‐defined disks. In the fabrication of the SL minidisks, IILD forms a structural and doping difference beyond the disk perimeter that acts, in effect, as a p–n junction during etching or wet oxidation. Etch profiles are shown demonstrating this behavior.
Databáze:	OpenAIRE
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