Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm
| Autor: | Fabian Olbrich, Michael Jetter, Matthias Paul, Katharina D. Zeuner, Jan Kettler, Peter Michler |
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| Rok vydání: | 2016 |
| Předmět: |
Quantum optics
Physics Photon Photoluminescence Physics and Astronomy (miscellaneous) business.industry General Engineering Physics::Optics General Physics and Astronomy 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter::Materials Science Quantum dot laser Quantum dot 0103 physical sciences Electro-absorption modulator Optoelectronics Spontaneous emission Emission spectrum 010306 general physics 0210 nano-technology business |
| Zdroj: | Applied Physics B. 122 |
| ISSN: | 1432-0649 0946-2171 |
| DOI: | 10.1007/s00340-015-6280-0 |
| Popis: | InAs quantum dots grown on a GaAs substrate have been one of the most successful semiconductor material systems to demonstrate single-photon-based quantum optical phenomena. In this context, we present the feasibility to extend the low-temperature photoluminescence emission range of In(Ga)As/GaAs quantum dots grown by metal-organic vapor-phase epitaxy from the typical window between 880 and 960 nm to wavelengths above 1.3 μm. A low quantum dot density can be obtained throughout this range, enabling the demonstration of single- and cascaded photon emission. We further analyze polarization-resolved micro-photoluminescence from a large number of individual quantum dots with respect to anisotropy and size of the underlying fine-structure splittings in the emission spectra. For samples with elevated emission wavelengths, we observe an increasing tendency of the emitted photons to be polarized along the main crystal axes. |
| Databáze: | OpenAIRE |
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