GZO/Si Photodiodes Exhibiting High Photocurrent-to-Dark-Current Ratio
| Autor: | Nur Efsan Koksal, Abdullah Yildiz, Mohamed Sbeta |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Photocurrent Materials science Silicon business.industry chemistry.chemical_element Heterojunction Photoelectric effect 01 natural sciences Electronic Optical and Magnetic Materials Photodiode law.invention chemistry Saturation current law 0103 physical sciences Transmittance Optoelectronics Electrical and Electronic Engineering business Dark current |
| Zdroj: | IEEE Transactions on Electron Devices. 66:2238-2242 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2019.2903600 |
| Popis: | ZnO:Ga (GZO)/Si photodiodes having different thicknesses of GZO layer are fabricated by the sol–gel spin-coating method. The photoelectric properties of the devices are investigated by measuring the current–voltage (I–V) characteristics. The photodiodes exhibit high rectification ratio (RR) and relatively low leakage current. Moreover, the best performance of the photodiodes is achieved by the heterojunction with GZO thickness of 35 nm, which has a transmittance over 87% in the visible range, compared to others. The resulting device shows a current RR of 1275 at ±3 V, a low saturation current ( $\text{I}_{\text {s}}$ ) of $3\times 10^{\text {-8}}$ A, and a photocurrent-to-dark-current ratio of 4639 at −3 V under 100 mW/cm2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|