| Autor: |
D. Marin-Cudraz, Johan Bourgeat, Ph. Galy |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
ICICDT |
| DOI: |
10.1109/icicdt.2014.6838590 |
| Popis: |
The aim of this paper is to introduce a new design of modular bi-directional power switch for 28nm Ultra Thin Body and BOX (UTBB) Full Depleted (FD) SOI advanced CMOS technology and beyond. Moreover, this proposed solution is self-protected against ElectroStatic Discharge (ESD). The first challenge is to obtain a robust symmetrical elementary power device compatible with this technology and with a silicon area optimization. The second one is to provide a new design to trigger this power device. The last challenge is to be efficient in term of ESD robust without additional protection device. These specifications are reached thanks to a Triac (dual back to back SCR) power device in matrix and BIMOS transistors used in a new trigger solution. The study is performed through the 2D-3D TCAD simulation and a test chip is performed in 28nm FDSOI with silicon demonstrator. Measurements are done in DC sweep condition, in high current pulse with 100ms time width. It also includes Transmission Line Pulse (TLP) with 100ns time width to characterize and qualify this design and topology in ESD range time event. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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