A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters
| Autor: | Emmanuel Torres-Rios, Reydezel Torres-Torres, Edmundo A. Gutierrez-D, G. Valdovinos-Fierro |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Computer Science::Hardware Architecture
Measurement method Materials science CMOS Equivalent series resistance MOSFET Electronic engineering Scattering parameters Electrical and Electronic Engineering Independent component analysis AND gate Electronic Optical and Magnetic Materials Computational physics |
| Zdroj: | IEEE Transactions on Electron Devices. 53:571-573 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2006.870328 |
| Popis: | An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-/spl mu/m channel-length MOSFET. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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