Acetylene on Si(111): carbon incorporation in the growth of c-SiC thin layers

Autor:	Roberto Gunnella, Georges Dufour, Paola Castrucci, R. Bernardini, S Pollano, François Rochet, M. De Crescenzi
Rok vydání:	2001
Předmět:	Auger electron spectroscopy Thin layers Silicon Carbonization chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Bond length chemistry.chemical_compound Crystallography chemistry Acetylene Lattice (order) Materials Chemistry Silicon carbide
Zdroj:	Surface Science. 489:185-190
ISSN:	0039-6028
DOI:	10.1016/s0039-6028(01)01176-1
Popis:	Pseudomorphic c-SiC alloys on Si(1 1 1) were grown by exposure to acetylene (C 2 H 2 ) in ultra-high-vacuum conditions. The behavior of C incorporation in the lattice for different substrate growth temperatures was studied by UHV electronic techniques. We found that C atoms occupy tetrahedral substitutional sites in the Si lattice when the substrate temperature is kept below 650°C. With increasing temperature, up to 950°C, we have observed a substantial increase of the C atoms mainly bounded to silicon in nonsubstitutional sites in a nearly planar sp 2 configuration. This is evidenced by the analysis of the line shape of the near-edge energy loss and by extended energy loss fine structure measurements which are particularly sensitive to the bond length around each carbon atom.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4dfbeeb86b9f9fefc43eb58278550b1b https://doi.org/10.1016/s0039-6028(01)01176-1 Zobrazit plný text záznamu Full Text from ScienceDirect