The Effect of Underlapped Segments on InSb Nanowire Field Effect Transistors

Autor:	Miroslav Penchev, Cengiz S. Ozkan, Xiaoye Jing, Jiebin Zhong, Roger K. Lake, Mihri Ozkan, Rajat Kanti Paul
Rok vydání:	2015
Předmět:	Materials science business.industry Nanowire Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Electronic Optical and Magnetic Materials
Zdroj:	Journal of Nanoelectronics and Optoelectronics. 10:82-85
ISSN:	1555-1318 1555-130X
DOI:	10.1166/jno.2015.1719
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4deb71031bbe3588cf24a630e6cffd23 https://doi.org/10.1166/jno.2015.1719 Zobrazit plný text záznamu