Properties of Methyl Boron Nitride Film for Next Generation Low-kInterconnection
| Autor: | Daisuke Watanabe, Makoto Hara, Chiharu Kimura, Shinji Tokuyama, Hidemitsu Aoki, M. K. Mazumder, Takashi Sugino |
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| Rok vydání: | 2008 |
| Předmět: |
Interconnection
Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Young's modulus Nanotechnology Dielectric Nitride Copper symbols.namesake Nanopore chemistry.chemical_compound chemistry Boron nitride symbols Optoelectronics business Boron |
| Zdroj: | Japanese Journal of Applied Physics. 47:2492-2495 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.47.2492 |
| Popis: | Low-dielectric-constant (k) materials for large-scale integration (LSI) interconnect insulators are required to meet the fast development of high-speed devices. Introducing nanopores into dielectrics reduces their k effectively but also markedly degrades film strength (Young's modulus). Developing a new low-k material is important for a stable integration with multilevel interconnections. We have investigated a low-k material of boron nitride containing methyl (methyl BN) using tris(dimethylamino)boron (TMAB) gas. This is the first report on the characteristics of a methyl BN film deposited using TMAB. We have succeeded in fabricating a low-k material with k 26 GPa. Moreover, the film can easily be etched using CF4 gas. The methyl BN film as a low-k material can readily be applicable to next-generation node technology devices. |
| Databáze: | OpenAIRE |
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