| Autor: |
K. Tapily, Robert D. Clark, Zheng Wang, Sebastian E. Reyes-Lillo, Kisung Chae, Steven Consiglio, Dina H. Triyoso, Gerrit J. Leusink, Kyeongjae Cho, Josh Kacher, Michael J. Hoffmann, Andrew C. Kummel, Asif Islam Khan, S. F. Lombardo, C.W. Nelson, Mengkun Tian, Nujhat Tasneem |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
2020 IEEE Symposium on VLSI Technology. |
| Popis: |
Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via insitu high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO 2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases-both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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