Plasma etching of submicron devices: in situ monitoring and control by multi-wavelength ellipsometry
| Autor: | H.L. Maynard, J.T.C. Lee, N. Layadi |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Fabrication Plasma etching business.industry Metals and Alloys Context (language use) Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics Etching (microfabrication) Ellipsometry Materials Chemistry Process control Wafer Reactive-ion etching business |
| Zdroj: | Thin Solid Films. :398-405 |
| ISSN: | 0040-6090 |
| Popis: | We show that the use of in situ multi-wavelength ellipsometry allows endpoint detection during the plasma etching of submicron devices in a high-density plasma reactor. In addition, a quantitative model is presented to understand the ellipsometry traces obtained while etching patterned wafers. It allows one to determine the thickness of a film in real-time as it is etched. Knowing the thickness in real-time allows greater process control, as it enables one to stop or change the process at a specified remaining film thickness. This is extremely useful in the context of device fabrication, since processing conditions can be adjusted in real-time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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