A Review Article on Fin Field Effect Transistors Technology
| Autor: | Prashant Dwivedi, Nidhi Dhurandhar |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Digital electronics
Computer science business.industry Geography Planning and Development Transistor Hardware_PERFORMANCEANDRELIABILITY law.invention Semiconductor CMOS Hardware_GENERAL law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering General Earth and Planetary Sciences Field-effect transistor business Hardware_LOGICDESIGN Water Science and Technology Communication channel Electronic circuit |
| Zdroj: | CSVTU Research Journal on Engineering and Technology. 8:31-38 |
| ISSN: | 0974-8725 |
| DOI: | 10.30732/rjet.20190801004 |
| Popis: | There are numerous types of transistors we have studied. Beyond them, here, we have discussed an exhaustive type of Metal Oxide Field Effect Transistor (MOSFET), that is, Fin Field Effect Transistor (FinFET). Basically, we have reviewed the most demanding and promising type of Field Effect Transistor, that allows as an exclusive easy execution of transistor applications and simulation, both in digital and analog functions. So as to improve the execution and power capability of semiconductor applications, FinFET can be implemented over bulk MOSFET and are also encouraging FETs that can perform ideally over 32 nanometers technology. And due to these, as an issue of the Short Channel Effects (SCEs) can be overcome. Through multi gate FinFET designs, bulk CMOS circuits can be implemented effectively. We will see structures, different types and their classifications and some digital circuits designed by using FinFET. |
| Databáze: | OpenAIRE |
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